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參數(shù)資料
| 型號(hào)： | FDQ7698S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench |
| 中文描述： | 12 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-14/11 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 299K |
| 代理商： | FDQ7698S |
FDS7698S Rev C1 (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Type
Min
Typ Max Units
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
Q2
Q1
Q2
Q1
3.5
2.1
0.7
1.2
A
V
nS
nC
nS
nC
V
SD
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
V
GS
= 0 V,
V
GS
= 0 V,
I
F
= 15A,
d
iF
/d
t
= 300 A/μs
I
F
= 12A,
d
iF
/d
t
= 100 A/μs
I
S
= 3.5 A
I
S
= 7 A
I
S
= 2.1 A
(Note 2)
(Note 2)
(Note 2)
0.4
0.5
0.7
26
29
25
14
t
rr
Q
rr
t
rr
Q
rr
(Note 3)
(Note 3)
NOTE :
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user’s board design.
a)
68°C/W when
mounted on a 1in
2
pad
of 2 oz copper (Q1).
b)
52°C/W when
mounted on a 1in
2
pad
of 2 oz copper (Q2).
c)
118°C/W when mounted
on a minimum pad of 2 oz
copper (Q1).
d)
94°C/W when mounted on
a minimum pad of 2 oz
copper (Q2).
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
See “SyncFET Schottky diode characteristics” below.
F
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