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參數(shù)資料
| 型號(hào)： | FDQ7698S |
| 廠(chǎng)商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench |
| 中文描述： | 12 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-14/11 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 299K |
| 代理商： | FDQ7698S |
August 2003
2002 Fairchild Semiconductor Corporation
FDQ7698S Rev C1 (W)
FDQ7698S
Dual
Notebook
Power
Supply
N
-
Channel PowerTrench in SO-14 Package
General Description
The FDQ7698S is designed to replace two single SO-8
MOSFETs in DC to DC power supplies The high-side
switch (Q1) is designed with specific emphasis on
reducing switching losses while the low-side switch
(Q2) is optimized to reduce conduction losses using
Fairchild’s SyncFET
TM
technology.
Features
Q2
: 15 A, 30V. R
DS(on)
= 7.5 m
@ V
GS
= 10V
R
DS(on)
= 9 m
@ V
GS
= 4.5V
Q1
: 12A, 30V. R
DS(on)
= 12 m
@ V
GS
= 10V
R
DS(on)
= 16 m
@ V
GS
= 4.5V
SO-14
G1G2
Vin
S2S2
S2
14
13
12
3
8
5
6
7
Q2
Q1
1
2
8
9
10
11
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Q2
Q1
Units
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
30
±
16
15
50
2.4
1.3
30
±
16
12
50
1.8
1.1
V
V
A
W
°
C
(Note 1a)
- Pulsed
(Note 1a & 1b)
(Note 1c & 1d)
55 to +150
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a & 1b)
Package Marking and Ordering Information
Device Marking
Device
FDQ7698S
FDQ7698S
52
94
68
118
°
C/W
(Note 1c & 1d)
Reel Size
13”
Tape width
16mm
Quantity
2500 units
F
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