參數(shù)資料
型號: FDQ7238AS
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package
中文描述: 11 A, 30 V, 0.0132 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-14/11
文件頁數(shù): 2/9頁
文件大?。?/td> 184K
代理商: FDQ7238AS
FDQ7238AS Rev A (X)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Type
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V,
V
GS
= 0 V,
I
D
= 10 mA, Referenced to 25
°
C
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 24 V,
V
GS
= 0 V
I
D
= 1 mA
I
D
= 250
μ
A
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
ALL
30
30
V
Breakdown Voltage
25
24
mV/
°
C
μ
A
500
1
V
DS
= 24 V, V
GS
= 0 V,
T
J
= 125
°
C
V
GS
=
±
20 V,
5.6
40
mA
μ
A
nA
I
GSS
On Characteristics
V
GS(th)
Gate Threshold Voltage
Gate-Body Leakage
V
DS
= 0 V
±
100
(Note 2)
V
DS
= V
GS
,
V
DS
= V
GS
,
I
D
= 10 mA, Referenced to 25
°
C
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 14 A
V
GS
= 4.5 V,
I
D
= 13 A
V
GS
= 10 V, I
D
= 14A, T
J
= 125
°
C
V
GS
= 10 V,
I
D
= 11 A
V
GS
= 4.5 V,
I
D
= 10 A
V
GS
= 10 V, I
D
= 11, T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 5 V
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 10 V,
I
D
= 14 A
V
DS
= 10 V,
I
D
= 11 A
I
D
= 1 mA
I
D
= 250
μ
A
Q2
Q1
Q2
Q1
Q2
Q1
1
1
1.8
1.7
3
4
7.2
8.7
10
11
13
15
3
3
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
m
8.7
10.5
12.5
13.2
16
19
I
D(on)
On–State Drain Current
Q2
Q1
Q2
Q1
50
50
A
S
g
FS
Forward Transconductance
58
43
Dynamic Characteristics
C
iss
Input Capacitance
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
1530
920
440
190
160
120
1.9
1.9
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
R
g
Gate Resistance
V
GS
= 15mV, f = 1.0 MHz
F
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