參數(shù)資料
型號： FDPF16N50
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 500V N-Channel MOSFET
中文描述： 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁數(shù)： 1/10頁
文件大?。?/td> 1004K
代理商： FDPF16N50
2007 Fairchild Semiconductor Corporation
FDP16N50 / FDPF16N50 Rev. B
1
www.fairchildsemi.com
F
February 2007
UniFET
TM
FDP16N50 / FDPF16N50
500V N-Channel MOSFET
Features
16A, 500V, R
DS(on)
= 0.38
@V
GS
= 10 V
Low gate charge ( typical 32 nC)
Low C
rss
( typical 20 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Symbol
Parameter
FDP16N50
FDPF16N50
Unit
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
16
9.6
16 *
9.6
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
64
64
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
780
mJ
Avalanche Current
(Note 1)
16
A
Repetitive Avalanche Energy
(Note 1)
20
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
200
1.59
52
0.41
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
300
°
C
Symbol
Parameter
FDP16N50
FDPF16N50
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
0.63
2.4
°
C/W
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDPF16N50_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FDPF16N50T 功能描述:MOSFET 500V 16A NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDPF16N50T_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FDPF16N50TRDTU 制造商:Fairchild Semiconductor Corporation 功能描述:
FDPF16N50UT 功能描述:MOSFET 500V 15A N-Chan FRFET UniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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