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參數(shù)資料
| 型號： | FDP20N50F |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel MOSFET, FRFET 500V, 20A, 0.26ヘ |
| 中文描述： | 20 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 786K |
| 代理商： | FDP20N50F |
tm
October 2007
UniFET
F
2007 Fairchild Semiconductor Corporation
FDP20N50F / FDPF20N50FT Rev. A1
www.fairchildsemi.com
1
TM
FDP20N50F / FDPF20N50FT
N-Channel MOSFET, FRFET
500V, 20A, 0.26
Features
R
DS(on)
= 0.22
( Typ.)@ V
GS
= 10V, I
D
= 10A
Low gate charge ( Typ. 50nC)
Low C
rss
( Typ. 27pF)
Fast reverse recovery switching of built-in diode
Fast switching
100% avalanche tested
Improve dv/dt capability
RoHS compliant
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
TO-220
FDP Series
G
S
D
D
G
S
TO-220F
FDPF Series
G
S
D
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
V
GSS
Parameter
FDP20N50F
FDPF20N50FT
500
±30
20*
12.9*
80*
1110
20
25
4.5
38.5
0.3
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (T
C
= 25
o
C)
I
D
20
12.9
80
A
-Continuous (T
C
= 100
o
C)
I
DM
E
AS
I
AR
E
AR
dv/dt
Drain Current - Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
(T
C
= 25
o
C)
- Derate above 25
o
C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
A
mJ
A
mJ
V/ns
W
W/
o
C
o
C
P
D
Power Dissipation
250
2.0
T
J
, T
STG
T
L
300
o
C
Symbol
Parameter
FDP20N50F
FDPF20N50FT
Units
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction to Case
0.5
3.3
o
C/W
Thermal Resistance, Case to Sink Typ.
0.5
-
Thermal Resistance, Junction to Ambient
62.5
62.5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDP20N50F_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 20A, 0.26?? |
| FDP20N50T | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PFC+PWM Combination Controller |
| FDP20T | 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE |
| FDP-20-T | 功能描述:集管和線殼 20pos. DIP Plug .100 x .300 RoHS:否 產(chǎn)品種類:1.0MM Rectangular Connectors 產(chǎn)品類型:Headers - Pin Strip 系列:DF50 觸點類型:Pin (Male) 節(jié)距:1 mm 位置/觸點數(shù)量:16 排數(shù):1 安裝風格:SMD/SMT 安裝角:Right 端接類型:Solder 外殼材料:Liquid Crystal Polymer (LCP) 觸點材料:Brass 觸點電鍍:Gold 制造商:Hirose Connector |
| FDP22N50N | 功能描述:MOSFET UniFETII 500V 22A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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