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參數(shù)資料
| 型號(hào)： | FDP8896 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 30V, 92A, 5.9mз |
| 中文描述： | 80 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 266K |
| 代理商： | FDP8896 |
2004 Fairchild Semiconductor Corporation
FDP8896 Rev. A1
F
Figure 5. Forward Bias Safe Operating Area
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
0.1
1
10
100
1000
1
10
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10
μ
s
1ms
DC
100
μ
s
10ms
1
10
100
0.01
0.1
t
AV
, TIME IN AVALANCHE (ms)
1
10
100
500
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
40
80
120
160
1.5
2.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.5
3.0
3.5
4
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
40
80
120
160
0
0.25
0.5
0.75
1.0
1.25
1.5
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 4V
V
GS
= 3V
V
GS
= 5V
4
6
8
10
12
14
2
4
6
8
10
I
D
= 1A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 35A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
1.4
1.6
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 35A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
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