參數(shù)資料
型號: FDP8880
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 11 A, 30 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 2/11頁
文件大小: 231K
代理商: FDP8880
2005 Fairchild Semiconductor Corporation
FDP8880 / FDB8880 Rev. A
www.fairchildsemicom
F
2
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
54
48
11
A
A
A
A
Figure 4
31
55
0.37
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-220,TO-263
Thermal Resistance Junction to Ambient TO-220,TO-262 ( Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
2.73
62
43
o
C/W
o
C/W
o
C/W
Device Marking
FDP8880
FDB8880
FDP8880
FDB8880
Device
FDP8880
FDB8880
Package
TO-220AB
TO-263AB
TO-220AB
TO-263AB
Reel Size
Tube
330mm
Tube
330mm
Tape Width
N/A
24mm
N/A
24mm
Quantity
50 units
800 units
50 units
800 units
FDP8880_NL (Note 3)
FDB8880_NL (Note 3)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 40A, V
GS
= 10V
I
D
= 40A, V
GS
= 4.5V
I
D
= 40A, V
GS
= 10V,
T
J
= 175
o
C
1.2
-
-
-
2.5
V
r
DS(ON)
Drain to Source On Resistance
0.0095 0.0116
0.012
0.0145
-
0.015
0.019
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