參數(shù)資料
型號: FDP8870
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET 30V, 156A, 4.1mз
中文描述: 19 A, 30 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 5/10頁
文件大?。?/td> 262K
代理商: FDP8870
2004 Fairchild Semiconductor Corporation
FDP8870 Rev. A2
F
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
1.4
-80
-40
0
40
80
120
160
200
V
GS
= V
DS
, I
D
= 250
μ
A
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
1000
10000
0.1
1
10
30
400
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
20
40
60
80
100
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 15V
I
D
= 35A
I
D
= 5A
WAVEFORMS IN
DESCENDING ORDER:
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDP8870_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDP8870_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 156A, 4.1mW
FDP8870_F085 功能描述:MOSFET 30V/156A/4.1Mohm/NCH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP8874 功能描述:MOSFET 30V 114A 5.3 OHM N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP8874_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET