參數(shù)資料
型號(hào): FDP8441
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: N-Channel PowerTrench MOSFET (40V, 80A, 2.7mohm)
中文描述: 23 A, 40 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 296K
代理商: FDP8441
F
FDP8441 Rev.A
www.fairchildsemi.com
5
Figure 5.
1
10
100
0.1
1
10
100
1000
D
,
LIMITED
BY PACKAGE
10us
100us
1ms
10ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS
(on)
SINGLE PULSE
T
J
= MAX RATED
T
C
=
25
o
C
DC
4000
Forward Bias Safe Operating Area
0.01
0.1
1
10
100
1000
1
10
100
500
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
5000
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
40
80
120
160
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics
Figure 8.
0
1
2
3
4
0
40
80
120
160
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 4V
Saturation Characteristics
Figure 9.
Variation vs Gate to Source Voltage
3
4
V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
5
6
7
8
9
10
0
10
20
30
40
50
r
D
,
O
(
m
)
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Drain to Source On-Resistance
Figure 10.
Resistance vs Junction Temperature
-80
-40
T
J
, JUNCTION TEMPERATURE
(
o
C
)
0
40
80
120
160
200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
N
I
D
= 80A
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Normalized Drain to Source On
Typical Characteristics
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