參數(shù)資料
型號(hào): FDP14AN06LA0
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 12 AMP MINIATURE POWER RELAY
中文描述: 10 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263AB, 2 PIN
文件頁(yè)數(shù): 5/11頁(yè)
文件大?。?/td> 250K
代理商: FDP14AN06LA0
2004 Fairchild Semiconductor Corporation
FDB14AN06LA0 / FDP14AN06LA0 Rev. B
F
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
B
100
1000
0.1
1
10
60
5000
50
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
10
20
30
40
50
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 30V
I
D
= 60A
I
D
= 10A
WAVEFORMS IN
DESCENDING ORDER:
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDP14AN06LA0 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDP14AN06LA0_Q 功能描述:MOSFET Single N-Ch 60V Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP14G 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE
FDP14N30 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:300V N-Channel MOSFET
FDP14N60 功能描述:MOSFET 14a 600V N-Ch SPMS 0.490 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube