參數(shù)資料
型號(hào): FDN338P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: P-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述: 1600 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-3
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 85K
代理商: FDN338P
FDN338P Rev.D
0
1
2
3
4
5
0
2
4
6
8
10
-V , DRAIN-SOURCE VOLTAGE (V)
-
D
V = -4.5V
-4.0
-3.5
-2.5
-3.0
-2.0
-1.5
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
.
R
D
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
V = -4.5V
I = -1.6A
Figure 3. On-Resistance Variation
with Temperature
.
0
1
2
3
4
0
2
4
6
8
10
-V , GATE TO SOURCE VOLTAGE (V)
-
D
V = -5V
T = -55°C
125°C
25°C
Figure 5. Transfer Characteristics.
0
0.2
-V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
10
-
S
25°C
-55°C
V = 0V
J
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
1
2
3
4
5
0
0.1
0.2
0.3
0.4
0.5
-V ,GATE TO SOURCE VOLTAGE (V)
R
25°C
T = 125°C
I = -0.8A
D
0
2
4
6
8
10
0.8
1
1.2
1.4
1.6
1.8
2
-I , DRAIN CURRENT (A)
D
V = -2.0V
R
D
-3.0
-3.5
-4.5
-4.0
-2.5
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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