- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375777 > FDN337N (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Logic Level Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號： | FDN337N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 2200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 270K |
| 代理商： | FDN337N |
FDN337N Rev.C
0
2
4
6
8
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V
G
I = 2.2A
15V
V = 5V
10V
0.1
0.5
V , DRAI N-SOURCE VOLTAGE (V)
1
2
5
10
20
50
0.01
0.03
0.1
0.3
1
2
5
10
20
I
D
DC
1s
10s
100ms
1ms
RDS(ON) LIMIT
V = 4.5V
SINGLE PULSE
R =250 °C/W
T = 25°C
A
GS
JA
10ms
0
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
100 300
10
20
30
40
50
P
SINGLE PULSE
R =270° C/W
T = 25°C
JA
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1b.
Transient thermal response will change depending on the circuit board design.
0.1
0.2
0.5
1
2
5
10
20
20
50
100
200
500
1000
VDS
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
(continued)
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
R (t) = r(t) * R
R = 270 °C/W
Duty Cycle, D = t /t
2
T - T = P * R JA
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDN338 | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN338P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN339AN | N-Channel 2.5V Specified PowerTrench MOSFET |
| FDN340 | Single P-Channel, Logic Level, PowerTrench MOSFET |
| FDN340P | Single P-Channel, Logic Level, PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDN337N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN337N_G | 制造商:Fairchild 功能描述:30V/20A MOSFET SOT-3 (Halogen free) |
| FDN337N_Q | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN337N-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN337 Series 30 V 65 mOhm N-Ch Field Effect Transistor - SSOT-3 |
| FDN337NX | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-Channel 30V 2.2A SuperSOT3 |
發(fā)布緊急采購，3分鐘左右您將得到回復。