參數(shù)資料
型號(hào): FDN337N
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述: 2200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-3
文件頁(yè)數(shù): 3/4頁(yè)
文件大小: 270K
代理商: FDN337N
FDN337N Rev.C
0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
6
V , DRAIN-SOURCE VOLTAGE (V)
I
D
2.5
V = 4.5V
2.0
1.5
3.0
0
1
2
3
4
5
6
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
D
V = 2.0V
3.5
3.0
4.5
2.5
R
D
)
,
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
V = 4.5 V
I = 2.2A
R
D
Figure 3. On-Resistance Variation
with Temperature
.
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
6
7
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 5.0V
T = -55°C
Figure 5. Transfer Characteristics.
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
0.0001
0.001
0.01
0.1
0.5
2
4
I
S
J
25°C
-55°C
V = 0V
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
1
2
3
4
5
0
0.05
0.1
0.15
0.2
0.25
V , GATE TO SOURCE VOLTAGE (V)
R
D
125°C
25°C
I = 1.1A
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