參數(shù)資料
型號: FDN336
廠商: Fairchild Semiconductor Corporation
英文描述: Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
中文描述: 單P溝道MOSFET的2.5V的指定PowerTrenchTM
文件頁數(shù): 2/5頁
文件大?。?/td> 64K
代理商: FDN336
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-20
V
Breakdown Voltage Temp. Coefficient
-16
mV /
o
C
Zero Gate Voltage Drain Current
V
DS
= -16 V, V
GS
= 0 V
-1
μA
T
J
= 55°C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-0.4
-0.9
-1.5
V
Gate Threshold Voltage Temp. Coefficient
3
mV /
o
C
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -1.3 A
0.122
0.2
T
J
=125°C
0.18
0.32
V
GS
= -2.5 V, I
D
= -1.1 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -4.5 V, I
D
= -2 A
0.19
0.27
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
-5
A
Forward Transconductance
4
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
330
pF
Output Capacitance
80
pF
Reverse Transfer Capacitance
35
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - On Delay Time
V
DD
= -5 V, I
D
= -0.5 A,
V
GS
= -4.5 V, R
GEN
= 6
7
15
ns
Turn - On Rise Time
12
22
ns
Turn - Off Delay Time
16
26
ns
Turn - Off Fall Time
5
12
ns
Total Gate Charge
V
DS
= -10 V, I
D
= - 2 A,
V
GS
= -4.5 V
3.6
5
nC
Gate-Source Charge
0.8
nC
Gate-Drain Charge
0.7
nC
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
-0.42
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.42 A
(Note)
-0.7
-1.2
V
Note:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDN336P Rev.C
a. 250
o
C/W when mounted on
a 0.02 in
2
pad of 2oz Cu.
b. 270
o
C/W when mounted on
a 0.001 in
2
pad of 2oz Cu.
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參數(shù)描述
FDN336P 功能描述:MOSFET SSOT-3 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDN336P_05 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single P-Channel 2.5V Specified PowerTrench MOSFET
FDN336P-NL 功能描述:MOSFET P-CH 20V 1.3A SSOT-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:PowerTrench® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
FDN337N 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDN337N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23