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參數(shù)資料
| 型號： | FDN336P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 中文描述： | 1300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 64K |
| 代理商： | FDN336P |
November 1998
FDN336P
Single P-Channel 2.5V Specified
PowerTrench
TM
MOSFET
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDN336P
Units
V
DSS
Drain-Source Voltage
-20
V
V
GSS
Gate-Source Voltage
±8
V
I
D
Drain Current
- Continuous
-1.3
A
- Pulsed
-10
P
D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T
J
,T
STG
Operating and Storage Temperature Range
-55 to +150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
FDN336P Rev.C
-1.3 A, -20 V. R
DS(ON)
= 0.20
@ V
GS
= -4.5 V
R
DS(ON)
= 0.27
@ V
GS
= -2.5 V.
Low gate charge (3.6 nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
High power version of industry standard SOT-23 package.
Identical pin out to SOT-23 with 30% higher power handling
capability.
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
G
D
S
SuperSOT -3
336
D
S
G
1998 Fairchild Semiconductor Corporation
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| FDN338 | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN338P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN339AN | N-Channel 2.5V Specified PowerTrench MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDN336P_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single P-Channel 2.5V Specified PowerTrench MOSFET |
| FDN336P-NL | 功能描述:MOSFET P-CH 20V 1.3A SSOT-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:PowerTrench® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| FDN337N | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN337N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN337N_G | 制造商:Fairchild 功能描述:30V/20A MOSFET SOT-3 (Halogen free) |
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