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參數(shù)資料
| 型號： | FDN327N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel 1.8 Vgs Specified PowerTrench MOSFET |
| 中文描述： | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 84K |
| 代理商： | FDN327N |
FDN327N Rev C (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 250
μ
A
20
V
Breakdown Voltage Temperature
I
D
= 250
μ
A,Referenced to 25
°
C
12
mV/
°
C
V
DS
= 16 V,
V
GS
= 8 V,
V
GS
= –8 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A,Referenced to 25
°
C
I
D
= 250
μ
A
0.4
0.7
1.5
V
Gate Threshold Voltage
–3
mV/
°
C
V
GS
= 4.5 V,
V
GS
= 2.5 V,
V
GS
= 1.8 V,
V
GS
= 4.5V, I
D
= 2 A, T
J
= 125
°
C
V
GS
= 4.5V,
V
DS
= 5V,
I
D
= 2.0 A
I
D
= 1.9 A
I
D
= 1.6 A
40
49
65
55
70
80
120
103
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 5 V
I
D
= 2 A
8
A
S
11
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
423
87
48
pF
pF
pF
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
6
12
13
29
4
6.3
ns
ns
ns
ns
nC
nC
nC
6.5
14
2
4.5
0.89
0.95
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 2 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
0.42
1.2
A
V
V
GS
= 0 V,
I
S
= 0.42 A
(Note 2)
0.6
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 250
°
C/W when mounted on a
0.02 in
2
pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDN327N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDN327N-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN327N Series 20V 70 mOhm N-Ch 1.8Vgs Specified PowerTrench Mosfet SSOT-3 |
| FDN335 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDN335N | 功能描述:MOSFET SSOT-3 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN335N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
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