參數(shù)資料
型號(hào): FDMS8670AS
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench㈢ SyncFET⑩
中文描述: 23 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN
文件頁數(shù): 6/7頁
文件大?。?/td> 224K
代理商: FDMS8670AS
F
T
www.fairchildsemi.com
6
2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8670AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0
5
10
15
20
25
30
1E-6
1E-5
0.0001
0.001
0.01
T
J
= 125
o
C
T
J
= 100
o
C
T
J
= 25
o
C
I
D
,
V
DS
, REVERSE VOLTAGE (V)
Typical Characteristics
(continued)
Figure 14. FDMS8670AS SyncFET Body Diode
Reverse Recovery Characteristics
Figure 15. SyncFET Body Diode Reverse Leakage
vs Drain to Source Voltage
C
TIME: 25nS/Div
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMS8670AS_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3.0mヘ
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FDMS8670S_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3.5mз
FDMS8670S_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ SyncFET TM
FDMS8672AS 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube