參數(shù)資料
型號: FDMS5672
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mohm
中文描述: 10.6 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, 8 PIN
文件頁數(shù): 4/7頁
文件大小: 527K
代理商: FDMS5672
F
M
FDMS5672 Rev.C1
www.fairchildsemi.com
4
Figure 7.
0
5
10
Q
g
, GATE CHARGE(nC)
15
20
25
30
35
0
2
4
6
8
10
V
DD
= 40V
V
DD
= 20V
V
G
,
V
DD
= 30V
I
D
= 10.6A
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
4000
60
40
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
1
10
100
1
10
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
A
,
20
500
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Case Temperature
25
50
T
C
, CASE TEMPERATURE
(
75
100
125
150
0
10
20
30
40
50
60
70
Limited by Package
R
θ
JC
= 1.6
o
C/W
V
GS
= 6V
V
GS
= 10V
I
D
,
o
C
)
Maximum Continuous Drain
Figure 11. Forward Bias Safe
Operating Area
0.1
1
10
100
1E-3
0.01
0.1
1
10
1s
DC
10s
100ms
10ms
1ms
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
o
C
I
D
,
VDS, DRAIN to SOURCE VOLTAGE (V)
50
500
Figure 12.
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
1000
V
GS
= 10V
SINGLE PULSE
P
(
P
)
,
t, PULSE WIDTH (s)
0.6
2000
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
----------------------
T
A
Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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