參數(shù)資料
型號(hào): FDMA1029PZ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Dual P-Channel PowerTrench MOSFET
中文描述: 3100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC
封裝: 2 X 2 MM, 0.80 MM HEIGHT, HALOGEN FREE, ROHS COMPLIANT, MICROFET-6
文件頁數(shù): 2/7頁
文件大?。?/td> 126K
代理商: FDMA1029PZ
FDMA1029PZ Rev B (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
GS
= 0 V,
I
D
= –250
μ
A, Referenced to 25
°
C
V
DS
= –16 V,
V
GS
= 0 V
V
GS
= ± 12 V, V
DS
= 0 V
I
D
= –250
μ
A
–20
V
–12
mV/
°
C
μ
A
μ
A
–1
±10
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –4.5 V, I
D
= –3.1 A
V
GS
= –2.5 V, I
D
= –2.5 A
V
GS
= –4.5 V, I
D
= –3.1 A, T
J
=125
°
C
V
DS
= –10 V,
I
D
= –3.1 A
I
D
= –250
μ
A
–0.6
–1.0
–1.5
V
4
mV/
°
C
m
60
88
87
95
141
140
g
FS
Forward Transconductance
–11
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
540
120
100
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
13
11
37
36
7.0
1.1
2.4
24
20
59
58
10
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V,
V
GS
= –4.5 V, R
GEN
= 6
I
D
= –1 A,
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –3.1 A,
F
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