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參數(shù)資料
| 型號： | FDJ127P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel -1.8 Vgs Specified PowerTrench MOSFET |
| 中文描述： | 4.1 A, 20 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-75, 6 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 172K |
| 代理商： | FDJ127P |
FDJ127P Rev B2 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= –250
μ
A,Referenced to 25
°
C
I
D
= –250
μ
A
–20
V
Breakdown Voltage Temperature
–12
mV/
°
C
V
DS
= –16 V, V
GS
= 0 V
V
GS
= 8 V,
V
GS
= –8 V,
–1
100
–100
μ
A
nA
nA
V
DS
= 0 V
V
DS
= 0 V
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A,Referenced to 25
°
C
V
GS
= –4.5 V, I
D
= –4.1 A
V
GS
= –2.5 V,
V
GS
= –1.8 V, I
D
= –2.7 A
V
GS
= –4.5 V, I
D
= –4.1,T
J
=125
°
C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V, I
D
= –4.1 A
I
D
= –250
μ
A
–0.4
–0.8
3
–1.5
V
Gate Threshold Voltage
mV/
°
C
I
D
= –3.5 A
42
61
97
60
10
60
85
133
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–16
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
780
120
60
pF
pF
pF
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
(Note 2)
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
10
9
27
11
7.2
1.7
1.5
20
10
43
20
10
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6
V
DS
= –10 V, I
D
= –4.1 A,
V
GS
= –4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–2.5
–1.2
A
V
V
GS
= 0 V,
I
S
= –2.5 A
(Note 2)
–0.8
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design
a)
77°C/W when mounted
on a 1in
pad of 2 oz
copper.
b)
110°C/W when mounted
on a minimum pad of 2 oz
copper.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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