參數(shù)資料
型號(hào): FDG8842CZ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Complementary PowerTrench㈢ MOSFET
中文描述: 750 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: ROHS COMPLIANT, SC-70, 6 PIN
文件頁數(shù): 6/8頁
文件大?。?/td> 458K
代理商: FDG8842CZ
F
M
www.fairchildsemi.com
6
2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
Typical Characteristics (Q2 P-Channel)
0
1
2
3
4
0.0
0.3
0.6
0.9
1.2
V
GS
= -2.0V
V
GS
= -4.5V
V
GS
= -2.7V
V
GS
= -1.5V
V
GS
= -2.5V
V
GS
= -3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
-
D
,
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 13.
On Region Characteristics
0.0
0.3
0.6
0.9
1.2
0
1
2
3
4
5
V
GS
= -3.5V
V
GS
= -4.5V
V
GS
= -1.5V
V
GS
= -2.5V
V
GS
= -2.0V
V
GS
= -2.7V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
-I
D
, DRAIN CURRENT(A)
Figure 14.
Normalized on-Resistance vs
Drain
Current and
Gate Voltage
Figure 15. Normalized On Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= -0.41A
V
GS
= -4.5V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
2
3
4
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
=-0.22A
r
D
,
S
(
Ω
)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 16. On-Resistance vs Gate to
Source Voltage
Figure 17. Transfer Characteristics
0.5
1.0
1.5
2.0
2.5
0.0
0.2
0.4
0.6
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
-
D
,
-V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
= -5V
Figure 18. Source to Drain Diode
Forward Voltage vs Source Current
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
3
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-
S
,
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
J
= 25°C unless otherwise noted
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