參數(shù)資料
型號(hào): FDG6302
廠商: Fairchild Semiconductor Corporation
英文描述: Dual P-Channel, Digital FET
中文描述: 雙P溝道,數(shù)字場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 302K
代理商: FDG6302
FDG6302P Rev.F
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
0
0.1
0.2
0.3
0.4
0.5
0
2
4
6
8
Q , GATE CHARGE (nC)
-
G
V = -5V
-10
-15
I = -0.14A
1
2
3
5
10
20
40
0.005
0.03
0.1
0.3
1
- V , DRAIN-SOURCE VOLTAGE (V)
-
RDS(ON) LIMIT
D
DC
1s
100ms
10ms
V = -4.5V
SINGLE PULSE
R = 415°C/W
T = 25°C
A
10s
0.1
0.2
0.5
1
2
5
10
20
0.5
1
3
5
10
20
40
-V , DRAIN TO SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0 V
C ss
C s
00
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
200
10
20
30
40
50
P
SINGLE PULSE
R =415°C/W
T = 25°C
A
JA
0.0001
0.001
0.01
0.1
1
10
100
200
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
T - T = P * R (t)
P(pk)
t
1
t
2
R (t) = r(t) * R
R =415
°C/W
JA
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermalresponse will change depending on the circuit board design.
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