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參數(shù)資料
| 型號： | FDG6302 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual P-Channel, Digital FET |
| 中文描述： | 雙P溝道，數(shù)字場效應管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 302K |
| 代理商： | FDG6302 |
July 1999
FDG6302P
Dual P-Channel,
Digital FET
General Description
Features
.
*
The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
FDG6302P
Units
V
DSS
Drain-Source Voltage
-25
V
V
GSS
Gate-Source Voltage
-8
V
I
D
Drain/Output Current
- Continuous
-0.14
A
- Pulsed
-0.4
P
D
T
J
,T
STG
Maximum Power Dissipation
(Note 1)
0.3
W
Operating and Storage Temperature Range
-55 to 150
°C
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100 pF / 1500
)
6.0
kV
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°C/W
FDG6302P Rev.F1
-25 V, -0.14 A continuous, -0.4 A peak.
R
DS(ON)
= 10
@ V
GS
= -4.5 V,
R
DS(ON)
= 13
@ V
GS
= -2.7 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V
GS(th)
< 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface
mount package.
These dual P-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. This device has been
designed especially for low voltage applications as a
replacement for bipolar digital transistors and small
signal MOSFETs.
SOT-23
SuperSOT
TM
-8
SO-8
SOT-223
SC70-6
SuperSOT
TM
-6
1 or 4
*
6 or 3
5 or 2
4 or 1
*
2 or 5
3 or 6
SC70-6
G1D2
S1
D1
S2
G2
.02
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PDF描述 |
|---|---|
| FDG6302P | Dual P-Channel, Digital FET |
| FDG6303 | Dual N-Channel, Digital FET |
| FDG6303N | Dual N-Channel, Digital FET |
| FDG6304 | Dual P-Channel, Digital FET |
| FDG6304P | Dual P-Channel, Digital FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG6302P | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6302P_D87Z | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6302P_Q | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6302PD87Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 25V V(BR)DSS | TSOP |
| FDG6303 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel, Digital FET |
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