參數(shù)資料
型號： FDFS2P106A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Integrated 60V P-Channel PowerTrench剖 MOSFET and Schottky Diode
中文描述： 3 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 2/6頁
文件大?。?/td> 91K
代理商： FDFS2P106A
FDFS2P106A Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= –250
μ
A
–60
V
Breakdown Voltage Temperature
I
D
= –250
μ
A, Referenced to 25
°
C
–60
mV/
°
C
V
DS
= –48 V,
V
GS
= 20V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A,Referenced to 25
°
C
V
GS
= –10 V, I
D
= –3A
V
GS
= –4.5 V, I
D
= –2.7 A
V
GS
= –10 V, I
D
= –3 A, T
J
=125
°
C
V
GS
= –10 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –3.3 A
I
D
= –250
μ
A
–1
–1.6
4
–3
V
Gate Threshold Voltage
mV/
°
C
91
112
150
8
110
140
192
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–10
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
714
84
33
pF
pF
pF
V
DS
= –30 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
8
11
28
8.5
15
2
3
15
19
45
17
21
ns
ns
ns
ns
nC
nC
nC
V
DD
= –30 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –30V,
V
GS
= –10 V
I
D
= –3A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–1.3
–1.2
A
V
V
GS
= 0 V,
I
S
= –1.3 A
(Note 2)
–0.8
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDFS2P106A_Q 功能描述:MOSFET 60V P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P753AZ 功能描述:MOSFET -30V Int P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P753AZ_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ
FDFS2P753Z 功能描述:MOSFET -30V -3A 115 OHM PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS6N303 功能描述:MOSFET N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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