參數(shù)資料
型號(hào)： FDFS2P102A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Integrated P-Channel PowerTrench MOSFET and Schottky Diode
中文描述： 3.3 A, 20 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 2/6頁
文件大?。?/td> 145K
代理商： FDFS2P102A
FDFS2P102A Rev A1(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= –250
μ
A
–20
V
Breakdown Voltage Temperature
I
D
= –250
μ
A,Referenced to 25
°
C
–23
mV/
°
C
V
DS
= –16 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A,Referenced to 25
°
C
V
GS
= –10 V,
V
GS
= –4.5 V,
V
GS
=–10 V, I
D
=–3.3A, T
J
=125
°
C
V
GS
= –10 V, V
DS
= –5 V
V
DS
= –5V, I
D
= –3.3 A
–1
–1.8
–3
V
Gate Threshold Voltage
4.4
mV/
°
C
I
D
= –3.3 A
I
D
= –2.5 A
96
152
137
125
200
190
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–10
A
S
4.6
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
182
60
24
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
5
14
11
2
2.1
1.0
0.6
10
52
20
4
3.0
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –10 V,
V
GS
= –5 V
I
D
= –3.3 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward Voltage
–1.3
–1.2
A
V
V
GS
= 0 V,
I
S
= –1.3 A
(Note 2)
–0.8
Schottky Diode Characteristics
I
R
Reverse Leakage
V
F
Forward Voltage
V
R
= 20 V
I
F
= 1 A
I
F
= 2 A
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
50
18
0.47
0.39
0.58
0.53
μ
A
mA
V
F
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDFS2P102A_NL 功能描述:MOSFET 20V/20V 125/200MO SO8 500A GOX, PTII RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P103 功能描述:MOSFET P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P103_Q 功能描述:MOSFET P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P103A 功能描述:MOSFET P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P103A_Q 功能描述:MOSFET P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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