參數(shù)資料
型號： FDFS2P102
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： FETKEY P-Channel MOSFET with Schottky Diode
中文描述： 3.3 A, 20 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 3/5頁
文件大?。?/td> 87K
代理商： FDFS2P102
F
FDFS2P102 Rev. E
Typical Characteristics
0.8
1
1.2
1.4
1.6
1.8
2
0
10
20
30
40
50
60
I
D
, DIRAIN CURRENT (A)
R
D
,
D
V
GS
= 4.0V
5.0V
6.0V
7.0V
10V
4.5V
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 7.6A
V
GS
= 10V
0
10
20
30
40
50
60
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
0
0.01
0.02
0.03
0.04
0.05
0.06
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 3.8A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current
and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0
1
2
3
4
5
0
4
8
12
16
20
-V , DRAIN-SOURCE VOLTAGE (V)
-
D
-4.5V
-4.0V
-6.0V
-3.5V
V = -10V
-7.0V
-5.0V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDFS2P102_Q 功能描述:MOSFET Integrated P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P102A 功能描述:MOSFET P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P102A_NL 功能描述:MOSFET 20V/20V 125/200MO SO8 500A GOX, PTII RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P103 功能描述:MOSFET P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P103_Q 功能描述:MOSFET P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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