參數(shù)資料
型號： FDFC2P100
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm
中文描述： 3 A, 20 V, 0.252 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SUPERSOT, 6 PIN
文件頁數(shù)： 4/6頁
文件大?。?/td> 301K
代理商： FDFC2P100
F
M
FDFC2P100 Rev.C (W)
www.fairchildsemi.com
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0.0
0.5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
1.0
1.5
2.0
2.5
0
1
2
3
4
5
6
V
GS
= -3.5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
V
GS
= -2.0V
V
GS
= -2.5V
V
GS
= -3.0V
V
GS
=-4.5V
-
D
,
Figure 2.
vs Drain Current and Gate Voltage
0
1
2
3
4
5
6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
V
GS
= -4.5V
V
GS
= -3.5V
V
GS
= -2.5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
N
D
-I
D
, DRAIN CURRENT(A)
Normalized On-Resistance
V
GS
= -3.0V
V
GS
= -2.0V
Figure 3. Normalized On- Resistance
vs Junction Temperature
-80
-40
T
J
, JUNCTION TEMPERATURE
(
o
C
)
0
40
80
120
160
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= -3A
V
GS
= -4.5V
N
Figure 4.
1
2
3
4
5
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -1.5A
r
D
,
S
(
O
)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
V
DD
= - 5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
= - 55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
-
I
D
,
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-4
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
-
S
,
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
相關(guān)PDF資料
PDF描述
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參數(shù)描述
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FDFC3N108_05 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode
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