參數(shù)資料
型號: FDD8882_NL
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 35 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: LEAD FREE, DPAK-3
文件頁數(shù): 7/12頁
文件大?。?/td> 277K
代理商: FDD8882_NL
FDD8882/FDU8882 Rev. 1.0.0
www.fairchildsemi.com
F
7
Test Circuits and Waveforms
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
Figure 17. Gate Charge Test Circuit
Figure 18.
Gate Charge Waveforms
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
L
V
DD
Q
g(TH)
Q
gs
V
GS
= 1V
0
Q
gs2
Q
g(TOT)
V
GS
= 10V
V
DS
V
GS
I
g(REF)
0
Q
gd
Q
g(5)
V
GS
= 5V
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
相關(guān)PDF資料
PDF描述
FDU8882_NL N-Channel PowerTrench MOSFET
FDU8896 N-Channel PowerTrench MOSFET
FDD8896 N-Channel PowerTrench MOSFET
FDV301N Digital FET , N-Channel
FDV302 Digital FET, P-Channel
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD8896 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8896_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDD8896_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 94A, 5.7m??
FDD8896_F085 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8896_G 制造商:Fairchild Semiconductor Corporation 功能描述:N-Channel Power Trench MOSFET 30V,94A, 5.7m