參數(shù)資料
型號： FDD8770
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench㈢ MOSFET
中文描述： 35 A, 25 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： ROHS COMPLIANT, DPAK-3
文件頁數(shù)： 4/6頁
文件大?。?/td> 313K
代理商： FDD8770
F
FDD8770/FDU8770 Rev. A
www.fairchildsemi.com
4
Figure 7.
0
10
20
30
40
50
60
0
2
4
6
8
10
V
DD
= 13V
V
DD
= 16V
V
DD
= 10V
V
G
,
Q
g
, GATE CHARGE(nC)
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
6000
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
Capacitance vs Drain to Source Voltage
Figure 9.
0.01
0.1
t
AV
, TIME IN AVALANCHE(ms)
1
10
100
1
10
50
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 150
o
C
I
A
,
(
A
)
300
Unclamped Inductive Switching
Capability
Figure 10.
25
50
75
100
125
150
175
0
50
100
150
200
250
I
D
,
T
C
, CASE TEMPERATURE(
o
C)
R
θ
JC
= 1.3
o
C/W
V
GS
= 4.5V
V
GS
= 10V
Maximum Continuous Drain Current vs
Case Temperature
Figure 11.
1
10
0.1
1
10
100
600
100us
1ms
10ms
10us
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE
T
J
= MAX RATED
T
C
=
25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY
r
DS(on)
DC
50
LIMITED BY
PACKAGE
Forward Bias Safe Operating Area
Figure 12. Single
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
1000
10000
SINGLE PULSE
V
GS
= 10V
P
(
P
)
,
t
,
PULSE WIDTH
(s)
20000
T
C
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
----------------------
T
C
–
150
Pulse Maximum Power
Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD8778 功能描述:MOSFET 25V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8780 功能描述:MOSFET 25V N-Channel PwrTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8782 功能描述:MOSFET 25V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8796 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8870 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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