參數(shù)資料
型號： FDD8770
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench㈢ MOSFET
中文描述： 35 A, 25 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： ROHS COMPLIANT, DPAK-3
文件頁數(shù)： 3/6頁
文件大?。?/td> 313K
代理商： FDD8770
F
FDD8770/FDU8770 Rev. A
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1. On Region Characteristics
0
1
2
3
4
0
20
40
60
80
100
120
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
=
3.5V
V
GS
=
3V
V
GS
=
4.5V
V
GS
=
10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
Figure 2. Normalized
Current and Gate Voltage
0
20
40
60
80
100
120
0
1
2
3
4
N
D
I
D
, DRAIN CURRENT(A)
V
GS
= 3V
V
GS
= 3.5V
V
GS
=
10V
V
GS
=
4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
On-Resistance vs Drain
Figure 3.
-80
-40
0
40
80
120
160
200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 35A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Normalized On Resistance vs Junction
Temperature
Figure 4.
2
4
6
8
10
2
4
6
8
10
12
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 175
o
C
T
J
= 25
o
C
I
D
= 35A
r
D
,
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
20
40
60
80
100
120
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward
Voltage vs Source Current
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FDD8782 功能描述:MOSFET 25V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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