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參數(shù)資料
| 型號： | FDD8453LZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Automotive Low-Cost Non-Volatile FPGA Family; Voltage: 1.2V; Grade: -5; Package: Lead-Free PQFP; Pins: 208; Temperature: AUTO; LUTs (k): 17 |
| 中文描述： | 50 A, 40 V, 0.0106 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, TO-252, D-PAK-3 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 280K |
| 代理商： | FDD8453LZ |
F
www.fairchildsemi.com
3
2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev.C
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0.0
0.4
0.8
1.2
1.6
2.0
0
20
40
60
80
100
V
GS
= 4V
V
GS
= 10V
V
GS
=
4.5V
V
GS
= 3V
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
20
40
60
80
100
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 4V
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
,
DRAIN CURRENT (A)
V
GS
= 4.5V
V
GS
= 3V
V
GS
= 10V
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-75
-50
-25
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 15A
V
GS
= 10V
N
Figure 4.
2
4
6
8
10
3
6
9
12
15
18
21
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= 15A
r
D
,
D
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1
2
3
4
5
0
20
40
60
80
100
V
DS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
Source to Drain Diode
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相關代理商/技術參數(shù) |
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|---|---|
| FDD8453LZ_F085 | 功能描述:MOSFET 40V N-Channel POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD8453LZ_F085_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power Trench?? MOSFET 40V, 50A, 6.5m?? |
| FDD8505 | 制造商:ELMEC 功能描述: |
| FDD850N10L | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD850N10LD | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSF N CH 100V 15.7A DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 100V, 15.7A, 75mOhm N-Channel BoostPak |
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