- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375772 > FDD8451 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench MOSFET 40V, 28A, 24mOHM PDF資料下載
參數(shù)資料
| 型號： | FDD8451 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 40V, 28A, 24mOHM |
| 中文描述： | 9 A, 40 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 349K |
| 代理商： | FDD8451 |
F
FDD8451 Rev. B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
I
D
= 250
μ
A, referenced to
25°C
V
DS
= 32V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
40
V
33.5
mV/°
C
1
μ
A
nA
±100
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 250
μ
A, referenced to
25°C
V
GS
= 10V, I
D
= 9A
V
GS
= 4.5V, I
D
= 7A
V
GS
= 10V, I
D
= 9A
T
J
= 150°C
V
DS
= 5V, I
D
= 9A
1
1.7
3
V
-5.7
mV/°C
r
DS(on)
Drain to Source On Resistance
19
23
24
30
m
32
41
g
FS
Forward Transcondductance
29
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
742
112
72
1.1
990
150
110
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
V
DD
= 20V, I
D
= 1A
V
GS
= 10V, R
GS
= 6
7
2
14
10
34
10
20
11
ns
ns
ns
ns
nC
nC
nC
nC
19
5
14
7.7
2.3
3.2
V
DS
= 20V, I
D
= 9A
V
GS
= 10V
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1:
Pulse time < 30
0
μ
s, Duty cycle = 2%.
2:
Starting T
J
= 25
o
C, L = 0.1mH, I
AS
= 20A ,V
DD
= 36V, V
GS
= 10V.
Source to Drain Diode Forward Voltage V
GS
= 0V, I
S
= 9A
Reverse Recovery Time
Reverse Recovery Charge
0.87
25
19
1.2
38
29
V
ns
nC
I
F
= 9A, di/dt = 100A/
μ
s
I
F
= 9A, di/dt = 100A/
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDD8453LZ | Automotive Low-Cost Non-Volatile FPGA Family; Voltage: 1.2V; Grade: -5; Package: Lead-Free PQFP; Pins: 208; Temperature: AUTO; LUTs (k): 17 |
| FDD8580 | N-Channel PowerTrench MOSFET 20V, 35A, 9mohm |
| FDD8586 | N-Channel PowerTrench MOSFET 20V, 35A, 5.5mOHM |
| FDD8750 | N-Channel PowerTrench MOSFET 25V, 2.7A, 40mohm |
| FDD8770 | N-Channel PowerTrench㈢ MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD8451_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDD8453LZ | 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD8453LZ_F085 | 功能描述:MOSFET 40V N-Channel POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD8453LZ_F085_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power Trench?? MOSFET 40V, 50A, 6.5m?? |
| FDD8505 | 制造商:ELMEC 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。