參數(shù)資料
型號(hào)： FDD8445_07
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.7mヘ
中文描述： N溝道的PowerTrench MOSFET的40V的㈢，50安培，870ヘ
文件頁數(shù)： 5/7頁
文件大?。?/td> 299K
代理商： FDD8445_07
F
FDD8445 Re
v A
(W)
www.fairchildsemi.com
5
Typical Characteristics
Figure 5. Forward Bias Safe Operating Area
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Indutive Switching
C
apability
Figure 7.
Transfer Characteristics
Figure 8.
Saturation Characteristics
Figure 9. Drain to Source On-Resistance
Variation vs
Gate to Source Voltage
Figure 10.
Normalized Drain to Source On
Resistance vs Junction Temperature
1
10
100
0.1
1
10
100
1000
10us
DC
10ms
1ms
100us
D
,
V
DS
, DRAIN-SOURCE VOLTAGE (V)
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
C
= 25
C
T
J
= MAX RATED
SINGLE PULSE
BY PACKAGE
CURRENT LIMITED
0.01
0.1
1
10
100
1000
1
10
100
STARTING T
J
= 150
O
C
STARTING T
J
= 25
O
C
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
200
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
2.0
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
20
40
60
80
100
120
140
PULSE DURATION=80
μ
s
DUTY CYCLE=0.5% MAX
T
J
= - 55
O
C
T
J
= 25
O
C
T
J
= 175
O
C
V
DD
= 6V
I
D
,
0.0
0.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1.0
1.5
2.0
2.5
3.0
0
20
40
60
80
100
120
4.0V
4.5V
5.0V
V
GS
=10V
PULSE DURATION =80
μ
S
DUTY CYCLE =0.5% MAX
I
D
,
4.5
6.0
7.5
9.0
4
8
12
16
20
R
D
,
O
(
m
Ω
)
T
J
= 25
o
C
T
J
= 175
o
C
I
D
=12A
PULSE DURATION=80
μ
S
DUTY CYCLE=0.5%MAX
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
10
-80
-40
T
J
, JUNCTION TEMPERATURE
(
o
C
)
0
40
80
120
160
200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
PULSE DURATION =80
μ
S
DUTY CYCLE =0.5% MAX
I
D
= 50A
V
GS
= 10V
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