參數(shù)資料
型號(hào)： FDD8445_07
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.7mヘ
中文描述： N溝道的PowerTrench MOSFET的40V的㈢，50安培，870ヘ
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 299K
代理商： FDD8445_07
F
FDD8445 Re
v A
(W)
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 32V
V
GS
= 0V
V
GS
=
±
20V
40
-
-
-
-
-
-
-
-
1
V
μ
A
I
DSS
Zero Gate Voltage Drain Current
T
J
=150°C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
V
GS(th)
Gate to Source Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 50A, V
GS
= 10V
I
D
= 50A, V
GS
= 10V,
T
J
= 175°C
2
-
2.8
6.7
4
V
R
DS(ON)
Drain to Source On Resistance
8.7
m
Ω
-
12.5
16.3
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
3040
295
178
1.7
45
17
5.8
12.5
9.5
10.5
4050
390
270
-
59
22
7.6
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
nC
f = 1MHz
V
GS
= 0 to 10V
V
GS
= 0 to 5V
V
GS
= 0 to 2V
V
DD
= 20V,
I
D
= 50A
Absolute Maximum Ratings
T
c
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
40
±20
70
15.2
Figure 4
144
79
0.53
-55 to +175
Units
V
V
A
A
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (V
GS
=10v) (Note 1)
Continuous (V
GS
=10v,with
R
θ
JA
= 52
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient TO-252, lin
2
copper pad area
1.9
52
o
C/W
o
C/W
Device Marking
FDD8445
Device
FDD8445
Package
TO-252AA
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
相關(guān)PDF資料
PDF描述
FDD8445 N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.7mOhm
FDD8447L N-Channel PowerTrench㈢ MOSFET 40V, 54A, 8.5mOhm
FDD8451 N-Channel PowerTrench MOSFET 40V, 28A, 24mOHM
FDD8453LZ Automotive Low-Cost Non-Volatile FPGA Family; Voltage: 1.2V; Grade: -5; Package: Lead-Free PQFP; Pins: 208; Temperature: AUTO; LUTs (k): 17
FDD8580 N-Channel PowerTrench MOSFET 20V, 35A, 9mohm
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD8447L 功能描述:MOSFET 40V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8447L 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 40V 15.2A TO-252 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 40V, 15.2A TO-252
FDD8447L_08 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:40V N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.5mヘ
FDD8447L_F085 功能描述:MOSFET 40V 50A N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8447L-F085 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 50A, 11.0m??
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*