參數(shù)資料
型號: FDD8444_06
廠商: Fairchild Semiconductor Corporation
英文描述: N-Channel PowerTrench㈢ MOSFET 40V, 50A, 5.2mз
中文描述: N溝道的PowerTrench㈢MOSFET的40V的,50A條,5.2mз
文件頁數(shù): 3/7頁
文件大?。?/td> 301K
代理商: FDD8444_06
F
FDD8444
Rev
B (W)
www.fairchildsemi.com
3
Electrical Characteristics
T
J
= 25
o
C unless otherwise noted
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1:
Package current limitation is 50A.
2:
Starting T
J
= 25
C, L = 0.67mH, I
AS
= 40A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
t
on
t
d(on)
t
r
t
d(off)
t
f
t
off
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
V
DD
= 20V, I
D
= 50A
V
GS
= 10V, R
GS
= 2
-
-
-
-
-
-
-
135
-
-
-
-
95
ns
ns
ns
ns
ns
ns
12
78
48
15
-
V
SD
Source to Drain Diode Voltage
I
SD
= 50A
I
SD
= 25A
-
-
-
-
0.9
0.8
39
45
1.25
1.0
51
59
V
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
I
F
= 50A, dI
F
/dt = 100A/
μ
s
ns
nC
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
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