參數(shù)資料
型號(hào)： FDD8444_06
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel PowerTrench㈢ MOSFET 40V, 50A, 5.2mз
中文描述： N溝道的PowerTrench㈢MOSFET的40V的，50A條，5.2mз
文件頁數(shù)： 2/7頁
文件大?。?/td> 301K
代理商： FDD8444_06
F
FDD8444
Rev
B (W)
www.fairchildsemi.com
2
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
V
GS
Parameter
Ratings
40
±20
145
20
Figure 4
535
153
1.02
-55 to +175
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (V
GS
= 10V) (Note 1)
Continuous (V
GS
= 10V, with R
θ
JA
= 52
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
A
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient TO-252, 1in
2
copper pad area
0.98
o
C/W
o
C/W
52
Package Marking and Ordering Information
Device Marking
FDD8444
Device
FDD8444
Package
TO-252AA
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 32V
V
GS
= 0V
V
GS
= ±20V
40
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
J
= 150
o
C
250
±100
I
GSS
Gate to Source Leakage Current
nA
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 50A, V
GS
= 10V
I
D
= 50A, V
GS
= 10V,
T
J
= 175
o
C
2
-
2.5
4
4
V
r
DS(on)
Drain to Source On Resistance
5.2
m
-
7.2
9.4
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
6195
585
332
1.9
89
43
11
23
11
20
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
f = 1MHz
V
GS
= 0 to 10V
V
GS
= 0 to 5V
V
GS
= 0 to 2V
V
DD
= 20V
I
D
= 50A
I
g
= 1.0mA
116
56
14.3
-
-
-
-
-
-
-
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