參數(shù)資料
型號(hào)： FDD6N50FTF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel MOSFET 500V, 5.5A, 1.15ヘ
中文描述： 5.5 A, 500 V, 1.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, DPAK-3
文件頁數(shù)： 2/9頁
文件大?。?/td> 324K
代理商： FDD6N50FTF
F
FDD6N50F / FDU6N50F Rev. A
www.fairchildsemi.com
2
Package Marking and Ordering Information
T
C
= 25
o
C unless otherwise noted
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking
FDD6N50F
FDD6N50F
FDU6N50F
Device
Package
D-PAK
D-PAK
I-PAK
Reel Size
380mm
380mm
-
Tape Width
16mm
16mm
-
Quantity
2500
2000
70
FDD6N50FTM
FDD6N50FTF
FDU6N50FTU
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Δ
BV
DSS
/
Δ
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, V
GS
= 0V, T
J
= 25
o
C
500
-
-
V
I
D
= 250
μ
A, Referenced to 25
o
C
-
0.15
-
V/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, T
C
= 125
o
C
V
GS
= ±30V, V
DS
= 0V
-
-
-
-
-
-
10
100
±100
μ
A
I
GSS
Gate to Body Leakage Current
nA
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 2.75A
V
DS
= 40V, I
D
= 2.75A
(Note 4)
3.0
-
-
-
5.0
1.15
-
V
Ω
S
1.0
4.3
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
-
-
-
-
720
85
6.3
15
4.4
960
115
9.5
19.8
-
pF
pF
pF
nC
nC
V
DS
= 400V, I
D
= 6A
V
GS
= 10V
(Note 4, 5)
Gate to Drain “Miller” Charge
-
6.1
-
nC
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 250V, I
D
= 6A
R
G
= 25
Ω
(Note 4, 5)
-
-
-
-
17
28.3
33.4
20.5
44
66.6
76.7
51
ns
ns
ns
ns
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 16mH, I
= 5.5A, V
DD
= 50V, R
G
= 25
Ω
, Starting T
= 25°C
3: I
≤
5.5A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
, Starting T
J
= 25°C
4: Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
-
-
-
-
-
5.5
22
1.5
-
-
A
A
V
ns
μ
C
V
GS
= 0V, I
SD
= 5.5A
V
GS
= 0V, I
SD
= 5.5A
dI
F
/dt = 100A/
μ
s
(Note 4)
85
0.15
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD6N50FTM 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6N50RTF 制造商:Fairchild Semiconductor Corporation 功能描述:
FDD6N50TF 功能描述:MOSFET 500V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6N50TF_WS 制造商:Fairchild Semiconductor Corporation 功能描述:
FDD6N50TM 功能描述:MOSFET 30V/16V 9.5/12MO NCH SINGLE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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