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參數(shù)資料
| 型號： | FDD6680A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel, Logic Level, PowerTrench MOSFET |
| 中文描述： | 14 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 200K |
| 代理商： | FDD6680A |
F
FDD6680A, Rev. C
FDD6680A
N-Channel, Logic Level, PowerTrench
MOSFET
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
DC/DC converter
Motor drives
February 2000
Features
56 A, 30 V. R
DS(ON)
= 0.0095
@ V
GS
= 10 V
R
DS(ON)
= 0.0130
@ V
GS
= 4.5 V.
Low gate charge ( 23nC typical ).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
2000 Fairchild Semiconductor Corporation
G
S
D
TO-252
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
30
±
20
56
14
100
60
2.8
1.3
-55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
(Note 1)
(Note 1a)
Maximum Drain Current - Pulsed
Maximum Power Dissipation @ T
C
= 25
o
C
(Note 1)
T
A
= 25
o
C
(Note 1a)
T
A
= 25
o
C
(Note 1b)
Operating and Storage Junction Temperature Range
P
D
W
T
J
, T
stg
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
2.1
96
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDD6680A
FDD6680A
Reel Size
13
’’
Tape width
16mm
Quantity
2500
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDD6680A_NBRZ002 | 制造商:Fairchild 功能描述:30V N-CA FET 95MO LF |
| FDD6680A_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680A_SBRZ001A | 制造商:Fairchild 功能描述:30V N-CH FET, 95 MO |
| FDD6680AS | 功能描述:MOSFET 30V NCH DPAK POWR TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680AS_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
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