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參數(shù)資料
| 型號： | FDD6670AL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 84 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 195K |
| 代理商： | FDD6670AL |
F
FDD6670A, Rev. C
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Avalanche ratings
(Note 2)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche Current
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSSF
Gate-Body Leakage Current,
Forward
I
GSSR
Gate-Body Leakage Current,
Reverse
V
DD
= 15 V, I
D
= 66 A
400
mJ
66
A
V
GS
= 0 V, I
D
= 250
μ
A
30
V
Breakdown Voltage
I
D
= 250
μ
A, Referenced to 25
°
C
25
mV/
°
C
V
DS
= 24 V, V
GS
= 0 V
1
μ
A
V
GS
= 20V, V
DS
= 0 V
100
nA
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
1
1.6
-4
3
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 10 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 15 A,T
J
=125
°
C
V
GS
= 4.5 V, I
D
=13 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 12 A
0.0065
0.0090
0.0085
0.008
0.013
0.010
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
50
A
S
55
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
3200
820
400
pF
pF
pF
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
15
15
85
42
35
9
16
27
27
105
68
50
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
V
DS
= 15 V, I
D
= 15 A,
V
GS
= 5 V,
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward
Voltage
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
2.3
1.2
A
V
V
GS
= 0 V, I
S
= 2.3 A
(Note 2)
0.72
a) R
θ
JA
= 40oC/W when mounted
on a 1in2 pad of 2oz copper.
b) R
θ
JA
= 96oC/W when mounted
on a minimum pad .
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
相關(guān)PDF資料 |
PDF描述 |
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| FDD6670A | N-Channel, Logic Level, PowerTrench MOSFET |
| FDD6670AS | 30V N-Channel PowerTrench SyncFET |
| FDD6670AS_NL | 30V N-Channel PowerTrench SyncFET |
| FDD6672A | null30V N-Channel PowerTrench MOSFET |
| FDD6676A | 30V N-Channel PowerTrench SyncFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD6670AL_M | 制造商:Fairchild 功能描述:0V/16V, 8/10MO, NCH, SINGLE, TO252 |
| FDD6670AL_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD6670AS | 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6670AS_NL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDD6670S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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