參數資料
型號: FDD6644
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 67 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: DPAK-3
文件頁數: 4/6頁
文件大?。?/td> 84K
代理商: FDD6644
FDD/FDU6644 Rev C(W)
Typical Characteristics
0
10
20
30
40
50
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
3.0V
4.5V
2.5V
3.5V
V
GS
= 10V
6.0V
0.75
1
1.25
1.5
1.75
2
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.0V
3.5V
4.5V
6.0V
10V
4.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 16A
V
GS
= 10V
0.004
0.008
0.012
0.016
0.02
0.024
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 8 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
70
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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參數描述
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