參數(shù)資料
型號: FDD6644
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 67 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: DPAK-3
文件頁數(shù): 1/6頁
文件大?。?/td> 84K
代理商: FDD6644
April 2001
FDD6644/FDU6644
30V N-Channel PowerTrench
MOSFET
2001 Fairchild Semiconductor Corporation
FDD/FDU6644 Rev C(W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Features
67 A, 30 V.
R
DS(ON)
= 8.5 m
@ V
GS
= 10 V
R
DS(ON)
= 10.5 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
Low gate charge (25 nC typical)
High power and current handling capability
G
S
D
D-PAK
(TO-252)
G D S
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
30
±
16
67
100
68
3.8
1.6
-55 to +175
Units
V
V
A
W
(Note 1a)
(Note 1)
(Note 1a)
P
D
(Note 1b)
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
2.2
96
°
C/W
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
FDD6644
FDD6644
FDU6644
FDU6644
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
F
相關(guān)PDF資料
PDF描述
FDU6680A 30V N-Channel PowerTrench MOSFET
FDU6680 30V N-Channel PowerTrench? MOSFET
FDD6680 N-Channel Logic Level PWM Optimized PowerTrench⑩ MOSFET
FDD6680AS 30V N-Channel PowerTrench SyncFET
FDD6680AS_NL 30V N-Channel PowerTrench SyncFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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