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參數資料
| 型號： | FDD6637 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 35V P-Channel PowerTrench-R MOSFET |
| 中文描述： | 13 A, 35 V, 0.0116 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數： | 2/7頁 |
| 文件大小： | 115K |
| 代理商： | FDD6637 |
FDD6637 Rev. C(W)
www.fairchildsemi.com
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain-Source Avalanche Ratings
E
AS
Drain-Source Avalanche Energy
(Single Pulse)
I
AS
Drain-Source Avalanche Current
V
DD
= -35 V, I
D
= -11 A, L=1mH
61
mJ
–14
A
Off Characteristics
(Note 2)
Drain–Source Breakdown
Voltage
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
BV
DSS
V
GS
= 0 V,
I
D
= –250
μ
A
–35
V
V
DS
= –28 V, V
GS
= 0 V
V
GS
=
±
25 V,
–1
±
100
μ
A
nA
V
DS
= 0 V
On Characteristics
V
GS(th)
R
DS(on)
(Note 2)
Gate Threshold Voltage
Static Drain–Source
On–Resistance
V
DS
= V
GS
, I
D
= –250
μ
A
V
GS
= –10 V,
V
GS
= –4.5 V,
V
GS
= –10 V, I
D
= –14 A, T
J
=125
°
C
V
DS
=–5 V, I
D
= –14 A
–1
–1.6
9.7
14.4
14.7
35
–3
11.6
18
19
V
m
Ω
I
D
= –14 A
I
D
= –11 A
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
2370
470
250
pF
pF
pF
V
DS
= –20 V,
f = 1.0 MHz
V
GS
= 0 V,
f = 1.0 MHz
3.6
Ω
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge, V
GS
= –10V
Q
g
Total Gate Charge, V
GS
= –5V
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
18
10
62
36
45
25
7
10
32
20
100
58
63
35
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
= –20 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
Ω
V
DS
= – 20 V, I
D
= –14 A
F
M
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6637 | 制造商:Fairchild Semiconductor Corporation 功能描述:P-CHANNEL POWERTRENCH MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -35V, 13A, TO-252 |
| FDD6637_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:35V P-Channel PowerTrench MOSFET |
| FDD6637_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -35V, -21A, 18m?? |
| FDD6637_F085 | 功能描述:MOSFET Trans MOS P-Ch 35V 13A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6644 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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