參數(shù)資料
型號： FDD6530A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 21 A, 20 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁數(shù)： 2/5頁
文件大小： 82K
代理商： FDD6530A
FDD6530A Rev. C (W)
)
ON
(
DS
D
R
P
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max
Units
Single Pulse, V
DD
= 10 V
55
8
mJ
A
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= 250
μ
A
20
V
Breakdown Voltage Temperature
15
mV/
°
C
V
DS
= 16 V,
V
GS
= 8 V,
V
GS
= –8 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
μ
A
nA
nA
100
–100
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= 250
μ
A
0.4
0.9
–3
1.2
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 4.5 V,
V
GS
= 2.5 V,
V
GS
= 4.5 V, I
D
= 8 A, T
J
= 125
°
C
V
GS
= 4.5 V,
V
DS
= 5 V
V
DS
= 5 V,
I
D
= 8 A
I
D
= 8 A
I
D
= 6.6 A
26
36
36
32
47
48
m
I
D(on)
g
FS
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
On–State Drain Current
Forward Transconductance
20
A
S
21
710
173
84
pF
pF
pF
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
(Note 2)
8
7
18
4
6.5
1.3
1.9
16
14
32
8
9
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 8 A,
2.7
1.2
A
V
V
GS
= 0 V,
I
S
= 2.7 A
(Note 2)
0.8
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
= 45°C/W when mounted on a
1in
2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
b) R
JA
= 96°C/W when mounted
on a minimum pad.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
Maximum current is calculated as:
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
F
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相關代理商/技術參數(shù)
參數(shù)描述
FDD6530A_Q 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6606 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6606_Q 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6612 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrench? MOSFET
FDD6612A 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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