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參數(shù)資料
| 型號： | FDD6296 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel Fast Switching PowerTrench? MOSFET |
| 中文描述： | 15 A, 30 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 105K |
| 代理商： | FDD6296 |
FDD6296/FDU6296 Rev. C(W)
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
(Note 2)
E
AS
Drain-Source Avalanche Energy
I
AS
Drain-Source Avalanche Current
Off Characteristics
Drain–Source Breakdown
Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ Max Units
Single Pulse, V
DD
= 15 V, I
D
=15A
165
15
mJ
A
BV
DSS
V
GS
= 0 V,
I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
29
mV/
°
C
V
DS
= 24 V,
V
GS
= 0 V
1
±
μ
A
I
GSS
Gate–Body Leakage
V
GS
=
±
20 V,
V
DS
= 0 V
100
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= 250
μ
A
1
1.7
–0.5
3
V
mV/
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 15 A, T
J
=125
°
C
V
DS
= 5 V,
I
D
= 15 A
I
D
= 15 A
I
D
= 13 A
7.5
9.0
9.3
58
8.8
11.3
15.0
m
g
FS
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
Forward Transconductance
S
1440
400
pF
pF
C
rss
R
G
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
Reverse Transfer Capacitance
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
140
pF
Gate Resistance
V
GS
= 15 mV,
f = 1.0 MHz
1.3
(Note 2)
11
6
29
13
22.5
12.2
4
3.5
19
11
46
23
31.5
17
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15V, I
D
= 15 A, V
GS
= 10 V
V
DS
= 15V,
V
GS
= 5 V
I
D
= 15 A,
3.2
A
V
SD
V
GS
= 0 V,
I
S
= 3.2 A
(Note 2)
0.74
1.2
V
25
13
nS
nC
I
F
= 15 A,
d
iF
/d
t
= 100 A/μs
F
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| FDD6530A_Q | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| FDD6606_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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