參數(shù)資料
型號(hào)： FDD5690
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 60V N-Channel PowerTrench⑩ MOSFET
中文描述： 30 A, 60 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： TO-252, 3 PIN
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 206K
代理商： FDD5690
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
W
DSS
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
V
DD
= 30 V, I
D
= 30 A
90
mJ
I
AR
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
30
A
V
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
60
57
mV/
°
C
V
DS
= 48 V, V
GS
= 0 V
V
GS
= 20V, V
DS
= 0 V
1
μ
A
nA
100
I
GSSR
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A,Referenced to 25
°
C
2
2.5
-6
4
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 10 V, I
D
= 9 A
V
GS
= 10 V, I
D
= 9 A, T
J
= 125
°
C
V
GS
= 6 V, I
D
= 8 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 9 A
0.023
0.032
0.026
0.027
0.048
0.032
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
25
A
S
24
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1110
150
75
pF
pF
pF
V
DS
= 25 V, V
GS
= 0 V
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
10
9
24
10
23
4
6.8
18
18
39
18
32
ns
ns
ns
ns
nC
nC
nC
V
DD
= 30 V, I
D
= 1 A
V
GS
= 10 V, R
GEN
= 6
V
DS
= 30 V, I
D
= 9 A
V
GS
= 10 V,
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward
Voltage
2.3
1.2
A
V
V
GS
= 0 V, I
S
= 2.3 A
(Note 2)
0.75
θ
θ
θ
!
≤
"##
μ
$%&
≤
'#(
)
θ
*+# &,!
''
)
θ
*-. &,!
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD5690 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK
FDD5690_02 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V N-Channel PowerTrench㈢ MOSFET
FDD5755 制造商:ELMEC 功能描述: 制造商:ELMEC 功能描述:Electronic Component
FDD5755C 制造商:ELMEC 功能描述: 制造商:ELMEC 功能描述:Electronic Component
FDD5810 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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