參數(shù)資料
型號(hào)： FDD107AN06LA0
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET 60V, 10A, 107m
中文描述： 3.4 A, 60 V, 0.091 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： TO-252AA, 3 PIN
文件頁數(shù)： 2/11頁
文件大小： 225K
代理商： FDD107AN06LA0
2004 Fairchild Semiconductor Corporation
FDD107AN06LA0 Rev. A1
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
J
= 25°C, L = 270
μ
H, I
AS
= 8A.
Device Marking
FDD107AN06LA0
Device
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
FDD107AN06LA0
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 50V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 10.9A, V
GS
= 10V
I
D
= 10A, V
GS
= 5V
I
D
= 10A, V
GS
= 5V,
T
J
= 175
o
C
1
-
-
-
3
V
r
DS(ON)
Drain to Source On Resistance
0.076
0.092
0.091
0.107
-
0.221
0.254
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
360
45
14
4.2
0.5
1.9
1.4
1.5
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V
I
D
= 10A
I
g
= 1.0mA
5.5
0.7
-
-
-
-
-
-
-
V
DD
= 30V, I
D
= 10A
V
GS
= 5V, R
GS
= 47
-
-
-
-
-
-
-
100
-
-
-
-
53
ns
ns
ns
ns
ns
ns
13
54
17
18
-
V
SD
Source to Drain Diode Voltage
I
SD
= 10A
I
SD
= 5A
I
SD
= 10A, dI
SD
/dt = 100A/
μ
s
I
SD
= 10A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
32
27
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD107AN06LA0 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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