參數(shù)資料
型號(hào): FDD068AN03
廠商: Fairchild Semiconductor Corporation
英文描述: N-Channel PowerTrench?? MOSFET 30V, 35A, 6.8mз
中文描述: N溝道的PowerTrench?? MOSFET的30V的,35A條,6.8mз
文件頁數(shù): 6/11頁
文件大?。?/td> 298K
代理商: FDD068AN03
2003 Fairchild Semiconductor Corporation
FDD068AN03L / FDU068AN03L Rev. B1
F
Test Circuits and Waveforms
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
Figure 17. Gate Charge Test Circuit
Figure 18.
Gate Charge Waveforms
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
L
V
DD
Q
g(TH)
Q
gs
V
GS
= 1V
0
Q
gs2
Q
g(TOT)
V
GS
= 10V
V
DS
V
GS
I
g(REF)
0
Q
gd
Q
g(5)
V
GS
= 5V
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
相關(guān)PDF資料
PDF描述
FDU2572 N-Channel PowerTrench MOSFET 150V, 29A, 54mз
FDD2572 N-Channel PowerTrench MOSFET 150V, 29A, 54mз
FDU3706 30V N-Channel PowerTrench MOSFET
FDD3706 30V N-Channel PowerTrench MOSFET
FDU6030BL 30V N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD068AN03L 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD10005 制造商:ELMEC 功能描述:
FDD107AN06LA0 功能描述:MOSFET 60V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD107AN06LA0 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDD10AN06_F085_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 50A, 10.5m??