- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375785 > FDD3706 (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDD3706 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 14.7 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 113K |
| 代理商： | FDD3706 |
April 2002
2002 Fairchild Semiconductor Corp.
FDD3706/FDU3706 Rev C (W)
FDD3706/FDU3706
20V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
, fast switching speed and
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Motor Drives
Features
50 A, 20 V
R
DS(ON)
= 9 m
@ V
GS
= 10 V
R
DS(ON)
= 11 m
@ V
GS
= 4.5 V
R
DS(ON)
= 16 m
@ V
GS
= 2.5 V
Low gate charge (16 nC)
Fast Switching
High performance trench technology for extremely
low R
DS(ON)
G
D-PAK
(TO-252)
G D S
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Continuous Drain Current @T
C
=25°C
Power Dissipation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
50
14.7
60
44
3.8
1.6
-55 to +175
Units
V
V
A
W
(Note 3)
@T
A
=25°C
Pulsed
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
(Note 1a)
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
P
D
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
FDD3706
FDD3706
FDU3706
FDU3706
(Note 1)
3.4
45
96
°
C/W
°
C/W
°
C/W
(Note 1a)
(Note 1b)
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDU6030BL | 30V N-Channel PowerTrench MOSFET |
| FDD6030BL | 30V N-Channel PowerTrench MOSFET |
| FDD6030 | N-Channel PowerTrenchTM MOSFET |
| FDD6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDU6296 | 30V N-Channel Fast Switching PowerTrench? MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD3860 | 功能描述:MOSFET 100V N-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD3860_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDD3860_G | 制造商:Fairchild Semiconductor Corporation 功能描述:100V N-Channel PowerTrenchR MOSFET |
| FDD390N15A | 功能描述:MOSFET PT5 100/20V NCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD390N15ALZ | 功能描述:MOSFET NCh150V,26A,42m ohms PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。