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參數(shù)資料
| 型號： | FDC699P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 2.5V PowerTrencH MOSFET |
| 中文描述： | 7 A, 20 V, 0.022 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, FLMP, SUPERSOT-6 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 162K |
| 代理商： | FDC699P |
FDC699P Rev C2 (W)
Typical Characteristics
0
1
2
3
4
5
0
5
10
Q
g
, GATE CHARGE (nC)
15
20
25
30
-
G
,
I
D
= -7A
V
DS
= -5V
-15V
-10V
0
500
1000
1500
2000
2500
3000
3500
4000
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
C
ISS
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
10s
100ms
1s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 111
o
C/W
T
A
= 25
o
C
10ms
1ms
100μs
10μs
0
0.001
10
20
30
40
50
0.01
0.1
10
100
1000
t
1
, TI1
P
SINGLE PULSE
R
θ
JA
= 111°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 111 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC699P_F077 | 功能描述:MOSFET P-Channel 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC699PDKR-ND | 制造商:Freescale Semiconductor 功能描述: |
| FDC-6X | 制造商:PREMO 制造商全稱:PREMO CORPORATION S.L 功能描述:IEC Connector Filter |
| FDC-6Z | 制造商:PREMO 制造商全稱:PREMO CORPORATION S.L 功能描述:IEC Connector Filter |
| FDC7265 | 制造商:SMC 功能描述: |
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