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參數(shù)資料
| 型號： | FDC6310P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 2200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 69K |
| 代理商： | FDC6310P |
FDC6310P Rev C(W)
Typical Characteristics
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
-3.0V
-2.5V
-2.0V
-1.8V
V
GS
=- 4.5V
-3.5V
0.75
1
1.25
1.5
1.75
2
2.25
2.5
2.75
0
1
2
3
4
5
6
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= -2.0V
-3.5V
-3.0V
-4.5V
-2.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -2.2A
V
GS
= -4.5V
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -2.2 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
0.5
1
1.5
2
2.5
3
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
125
o
C
V
DS
= -5V
25
o
C
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDC6310P_Q | 功能描述:MOSFET Dual P-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6312P | 功能描述:MOSFET SSOT-6 P-CH DUAL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6312P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6312P_Q | 功能描述:MOSFET SSOT-6 P-CH DUAL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6318 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel 1.8V PowerTrench Specified MOSFET |
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